Silicon Epitaxy
We have developed and applied in mass production technological processes to produce silicon Epi wafers for the following applications:
- Integrated circuits (IC)
- Low-signal diodes and transistors
- Power diodes and transistors
- Schottky diodes
- Ultra-fast diodes
- IGBT
- DMOS
- Multilayer Epi
- Buried Layer Epi
| Parameters range for Silicon Epi Wafers | |
|---|---|
| Wafer diameter | 76 mm, 100 mm, 125 mm, 150 mm + 200 mm (starting 2012) |
| Orientation | (111), (100) |
| Substrate dopant | Antimony, Boron, Arsenic |
| Epi-layer thickness, µm | 3,0 – 150 |
| Epi-layer dopant | Phosphorous, Boron, Arsenic |
| Epi-layer resistivity, Ohm.cm |
|
| n-type | 0,01 – 500 |
| p-type | 0,01 – 100 |
| Single-layer structure types | n-n+, p-n+, p-p+, n-p+ |
| Double-layer structure types | n1-n2-n+, n1-n2-p+, n-p-n+, p-n-p |
| Buried Layer Epi | Up to 3 buried layers |
