Silicon on Sapphire (SOS) Epitaxy
We manufacture Silicon on Sapphire (SOS) Epi wafers for the following applications:
- Tenso modules
- Radiation-resistant ICs
| Parameters range for Silicon on Sapphire (SOS) Epi Wafers | |
|---|---|
| Wafer diameter | 76 mm, 100 mm, 150 mm |
| Orientation | (1012) ± 1º |
| Substrate dopant | - |
| Epi-layer thickness, µm | 0,3 – 2,0 |
| Epi-layer dopant | Phosphorous, Boron |
| Epi-layer resistivity, Ohm.cm |
|
| n-type | according to spec. |
| p-type | 1,0 – 0,01 |
